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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N4403 TRANSISTOR (PNP) TO--92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25) Collector current A ICM : -0.6 Collector-base voltage V V(BR)CBO : -40 Operating and storage junction temperature range TJ, Tstg: -55 to +150 1.EMILTTER 2.BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) Test conditions MIN -40 -40 -5 -0.1 -0.1 -0.1 100 300 -0.4 -0.95 V V MAX UNIT V V V A A A Ic=-100A , IE=0 IC= -1mA , IB=0 IE=-100A, IC=0 VCB=-35 V, IE=0 VCE=-35 V, IB=0 VEB=-4V, IC=0 VCE=-2 V, IC=- 150mA IC=-150 mA, IB=-15mA IC= -150 mA, IB=-15mA VCE= -10V, IC= -20mA Transition frequency fT f = 100MHz 200 MHz |
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